SI2302CDS features ? halogen-free opti on available ? trenchfet ? power mosfet applications ? load switching for portable devices ? dc/dc converter product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 20 0.057 at v gs = 4.5 v 2.9 3.5 0.075 at v gs = 2.5 v 2.6 ordering information: SI2302CDS-t1-e3 (lead (pb)-free) SI2302CDS-t1-ge3 (lead (pb)-free and halogen-free) * marking code SI2302CDS (n2)* g s d top view 2 3 to-236 (sot-23) 1 notes: a. surface mounted on 1" x 1" fr4 board. b. pulse width limited by maximum junction temperature. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d 2.9 2.6 a t a = 70 c 2.3 2.1 pulsed drain current b i dm 10 continuous source current (diode conduction) a i s 0.72 0.6 power dissipation a t a = 25 c p d 0.86 0.71 w t a = 70 c 0.55 0.46 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 120 145 c/w steady state 140 175 maximum junction-to-foot steady state r thjf 62 78 rohs compliant 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes: a. pulse test: pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. max. static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.40 0.85 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 70 c 75 on-state drain current a i d(on) v ds 10 v, v gs = 4.5 v 6a drain-source on-resistance a r ds(on) v gs = 4.5 v, i d = 3.6 a 0.045 0.057 v gs = 2.5 v, i d = 3.1 a 0.056 0.075 forward transconductance a g fs v ds = 5 v, i d = 3.6 a 13 s diode forward voltage v sd i s = 0.95 a, v gs = 0 v 0.7 1.2 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 3.6 a 3.5 5.5 nc gate-source charge q gs 0.6 gate-drain charge q gd 0.45 gate resistance r g f = 1.0 mhz 2.0 4.0 8.0 switching tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.78 i d ? 3.6 a, v gen = 4.5 v, r g = 1 815 ns rise time t r 715 turn-off delay time t d(off) 30 45 fall time t f 715 source-drain reverse recovery time t rr i f = 3.6 a, di/dt = 100 a/s 8.5 15 body diode reverse recovery charge q rr 2.0 4.0 nc 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SI2302CDS product specification
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